References
-
Differential Hall-Effect Spectroscopy (DHES)
1. H. -J. Hoffmann: "Defect-Level Analysis
of Semiconductors by a New Differential Evaluation
of n(1/T)-Characteristics", Appl. Phys.
19(1979)307.
2. H. J. Hoffmann, H. Nakayama, T. Nishino
and Y. Hamakawa: "Differential Evaluatin
of the Hall Effect in Silicon with Oxygen-Related
Donors", Appl. Phys. A33(1984)47.
3. H. Nakayama, A. Matsuura, M. Kohno and
T. Nishino: "Differential Hall-Effect
Spectroscopy of Rare-Earth Impurities (Ce,
Er) in Silicon", Materials Science Forum
117-118(1993)279.