Alterations by Version-up

Version 1.5.1 (June 2, 2004)

This version can analyze data on 77 semiconductors, while the former version can only do on 28 semiconductors.

The data on p-type diamond, which was wrong in the former version, is corrected.

Version 1.5.0 (August 20, 2003)

Semiconductor data (eg. effective mass, equivalent minima in the conductin band)
are changed and added according to the latest litarature.


The curve-fitting procedure has been improved.

Version 1.4.2 (June 25, 2002)

The temperature-dependent majority-carrier concentration is automatically sorted
into temperature order, that is, from low temperature to high temperature,
when the concentration is saved to the *.pT or *.nT file.

Version 1.4.1 (June 10, 2002)

The curve-fitting procedure has been improved.

Version 1.4 (June 7, 2002)

By using curve-fitting procedure,
this version can finely adjust the densities and energy levels determined by FCCS.

Version 1.3.1 (May 23, 2002)

This version has reduced a possibility for the freeze of the FCCS application
in the Windows XP style.

Version 1.3 (May 14, 2002)

This version can determine the densities and energy levels of deep dopants
more precisely than the former versions
.

The number of equivalent minima in the conduction band is corrected from 4 to 3
for AlP, AlAs, AlSb, and GaP.

Version 1.2.1 (November 15, 2001)

The figures can be saved as BMP files.

Version 1.2 (October 25, 2001)

This version can consider the influence of the excited states of dopant
when the dopant level is deep.

Version 1.1.1 (September 17, 2001)

Improvement of searching peak of H(T,E_ref)
(This version fixs the bug included in Ver. 1.1.)

Version 1.1 (July 11, 2001)

The density and energy level of a deep dopant can be
determined in Version 1.1.


For example, the density and energy level of an acceptor
in SiC have been determined!

Version 1.0 (March 13, 2001)