Papers related with FCCS
Theoretical Consideration.
Theory
1.
"A Simple Graphic Method for Evaluating Densities and Energy Levels of Impurities in Semiconductor from Temperature Dependence of Majority-Carrier Concentration"
,
Jpn. J. Appl. Phys. 35(1996)L555.
2.
"Evaluation of Densities and Energy Levels of Donors and Acceptors in Conpensated Semiconductor from Temperature Dependence of Majority-Carrier Concentration"
,
Jpn. J. Appl. Phys. 35(1996)5297.
3.
"Evaluation of Densities and Energy Levels of Impurities with Close Energy Levels in Semiconductor from Temperature Dependence of Majority-Carrier Concentration"
,
Jpn. J. Appl. Phys. 35(1996)5680.
4.
"A Simple Graphical Method for Determining Densities and Energy Levels of Donors and acceptors in Semiconductor from Temperature Dependence of Majority Carrier Concentration"
,
Jpn. J. Appl. Phys. 36(1997)3541.
5.
"An Improved Mthod for Determing Densities and Energy Levels of Dopants and Traps by Means of Hall-Effect measurement"
,
Jpn. J. Appl. Phys. 38(1999)5176.
6.
"The influence of excited states of deep dopants on majority-carrier concentration in a wide-bandgap semiconductor"
,
New J. Phys.
4(2002)12.1.
Experimental Results
Irradiated Silicon
1.
"Evaluation of Hole Traps in 10-MeV Proton-Irradiated p-Type Silicon from Hall-Effect Measurements"
,
Jpn. J. App. Phys. 37(1998)6034.
2.
"Temperature Dependence of Electron Concentration in Type-Converted Silicon by 1x10
17
cm
-2
Fluence irradiation of 1 MeV Electrons"
,
Appl. Phys. Lett. 76(2000)2092.
3.
"Annealing Behavior of Donorlike Defects Induced by High-Fluence Irradiation of High-Energy Particles in p-Type Silicon"
Jpn. J. Appl. Phys. 42(2003)5187.
4H-SiC
1.
"Nitrogen Donor Concentrations and Its Energy Levels in 4H-SiC Uniquely Determined by a New Graphical Method Based on Hall-Effect Measurement"
,
Jpn. J. Appl. Phys. 38(1999)4013.
2.
"Real Relationship between Acceptor Density and Hole Concentration in Al-Implanted 4H-SiC"
,
Materials Science Forum 433-436(2003)447.
3.
"Occupation probability for acceptor in Al-implanted p-type 4H-SiC"
,
J. Appl. Phys. 94(2003)2234.
4.
"Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons"
Appl. Phys. Lett. 83(2003)4981.
3C-SiC
1.
"Determination Of Donor Densities and Donor Levels in 3C-SiC Grown from Si
2
(CH
3
)
6
Using Hall-Effect Measurements"
, Jpn. J. Appl. Phys. 39(2000)5069.
2.
"Donor Densities and Donor Energy levels in 3C-SiC Determined by a New Method Based on Hall-Effect Measurements"
, Materials Science Forum 353-356(2001)495.
6H-SiC
1.
"Influence of Excited States of Deep Acceptors on Hole Concentration in SiC"
,
Materials Science Forum 389-393(2002)679.
2.
"Investigation of a distribution function suitable for acceptors in SiC"
J. Appl. Phys. 95(2004)4213.
GaN
1.
"Influence of excited states of Mg acceptors on hole concentration in GaN"
,
phys. stat. sol. (c) 0(2003)2214.
GaSb
1.
"Acceptor Densities and Acceptor Levels in Undoped GaSb Determined by Free Carrier Concentration Spectroscopy"
,
Jpn. J. Appl. Phys. 41(2002)496.
Solar Cells
1.
"Dependence of Hole Concentration in p-Type Silicon Solar Cell Wafers on Temperature and on Position within the Plycrystalline Ingot"
,
Solid State Phenomena 93(2003)141.