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CHAPTER I
INTRODUCTION
References
CHAPTER II
PROPERTIES OF CONTACTS BETWEEN HYDROGENATED
AMORPHOUS SILICON AND OTHER MATERIALS
2-1. Introduction
2-2. Contact Properties for Undoped and P-doped a-Si;H
2-3. Contact Properties for B-doped a-Si:H
2-4. Summary
References
CHAPTER III
CAPACITANCE-VOLTAGE CHARACTERISTICS OF UNDOPED
a-Si:H/p c-Si HETEROJUNCTIONS
3-1. Introduction
3-2. Experimental High-frequency C-V Characteristics
3-2-1. C-V characteristics
3-2-2. Steady-sate heterojunction-monitored capacitance method
3-2-3. Band discontinuity between a-Si:H and c-Si
3-3. Simulation of High-frequency C-V Characteristics
3-3-1. Modeling
3-3-2. Simulation
3-3-3. Reliability of steady-state HMC method
3-4. Summary
References
CHAPTER IV
CURRENT-VOLTAGE CHARACTERISTICS OF UNDOPED
a-Si:H/p c-Si HETEROJUNCTIONS
4-1. Introduction
4-2. I-V Characteristics
4-3. Forward I-V Characteristics
4-4. Reverse I-V Characteristics
4-5. Summary
References
CHAPTER V
MIDGAP-STATE PROFILES DETERMINED BY TRANSIENT
HMC METHOD
5-1. Introduction
5-2. Transient Capacitance
5-3. Theory of Transient HMC Method
5-4. Transient HMC Measurements
5-5. Summary
References
CHAPTER VI
CHANGES OF MIDGAP STATES
6-1. Introduction
6-2. Midgap-state Profiles in Undoped Hydrogenated Amorphous Silicon-based Alloys
6-3. Thermal Recovery Process of Midgap-state Profile of Light-soaked Undoped a-Si:H
6-4. Optically and Thermally Induced Reversible Changes of Midgap States in Undoped a-Si:H
6-5. Summary
References
CHAPTER VII
CONCLUSION