すいません。ただいま工事中です。

下記の論文を参照下さい。

(1)  Junction properties of amorphous semiconductors
     Hideharu Matsuura;
     in Glow-Discharge Hydrogenated Amorphous Silicon,
     Edited by K.Tanaka(KTK Scientific Publishers,Tokyo,1989),
     Chapter 10,pp.227-249.
(2)  Electrical properties of amorphous/crystalline-semiconductor hetero-
     junctions
     Hideharu Matsuura and Hidyo Okushi;
     in Amorphous and Micro-crystalline Semiconductor Devices Volume �U:
     Materials and Device Physics,
     edited by J.Kanicki(Artech House,Boston,1992),
     Chapter11,pp.517-561.

(1)  Electrical properties of n-amorphous/p-crystalline silicon hetero-
     junctions
　 　Hideharu Matsuura,Tetsuhiro Okuno,Hideyo Okushi,and Kazunobu
     Tanaka;
     J.Appl.Phys.55(1984)1012-1029.
(2)  A novel method for determining the gap-state profile and its appli-
　　 cation to amorphous Si

Ge

:H films
     Hideharu Matsuura;
     J.Appl.Phys.64(1988)1964-1973.
(3)  Hydrogenated amorphous-silicon/crystalline-silicon heterjunctions:
     Properties and Applications
     Hideharu Matsuura;
     IEEEE Trans.ED-36(1989)2908-2914.
(4)  Simulation of high-frequency vapavitance-voltage characteristics of
     amorphous/crystalline heterjunctions
     Hideharu Matsuura;
     J.Appl.Phys.68(1990)1138-1142.

(1)  Ohmic contact properties of magnesium evaporated onto undoped and P-doped a-Si:H
     Hideharu Matsuura,tetsuhiro Okuno,Hideyo okushi,Satoshi Yamasaki,
     Akihisa Matsuda,Nobuhiro Hata,Hidetoshi Oheda,and Kazunobu
     Tanaka;
     jpn.J.Appl.Phys.22(1983)L197-L199.
(2)  Metal-semiconductor junctions and amorphous-crystalline hetero-
     junctions using B-doped hydrogenated amorphous silicon
     Hideharu Matsuura,Akihisa Matsuda,Hideyo Okushi,Tetsuhiro Okuno,
     and Kazunoby Tanaka;
     Appl.Phys Lett.34(1984)433-435.
(3)  Density of mid-gap states for undoped a-Si

Ge

 :H and a-Si:H deter-
     mined by steady0state heterojunction-monitored capacitance method
     Hideharu Matsuura;
     Jpn.J.Appl.Phys.27(1988)L513-L515.
(4)  Density-of-state distriution for undoped a-Si:H and a-Si

Ge

:H determinde by transient heterojunction-monitored capacitance method
     Hideharu Matsuura;
     Jpn.J.Appl.Phys.27(1988)L516-L518.
(5)  Thermal recovery process of the midgap-state profile of light-soaked
     undoped hydrogenated amorphous silicon
     Hideharu Matsuura;
     Appl.Phys.Lett.54(1989)344-346.
(6)  Midgap-state profiles in undoped amorphous-silicon-based alloys
     H.Matsuura,Z E.Smith,A.Matsuda,S.Yokoyama,M.Tanaka,m.Ueda
     and K.Tanaka;
     Phil.Mag.Lett.59(1989)109-114.

(1)  Electrical properties of n

-p amorphous-crystalline silicon hetero-
     junctions
     Hideharu Matsuura,Tetsuhiro Okuno,Hideyo Okushi,Nobuhiro Hata,
     Satoshi Yamasaki,Hidetoshi Oheda,Akihisa Matsuda,and Kazunobu
     Tanaka;
     Ext.Abs.15th Conf.Solid State Device & Materials,tokyo,1983,
     pp.185-188.
(2)  The density-of-state distribution in undoped a-Si:H and a-SiGe:H
     determined by geterojunctions with c-Si
     Hideharu Matsuura and Kazunobu Tanaka;
     Meter.Res.Soc.Symp,Reno,1988;
     Meter.Res.Soc.Symp.Proc.118(1988)647-652.
(3)  Opticaly and thermally induced reversible changes of midgap states
     in undoped a-Si:H
     Hideharu Matsuura;
     13h Int.Conf.Amorphous & Liquid Semiconductors Asheville,1989;
     J.Non-Cryst.Solids 114(1989)609-611.

(1)  Materials Research Society Symposium,
     Reno Nev.,April,1988;
     The density-of state distribution in undoped a-Si:H and a-SiGe:H
     determined by heterojunctions with c-Si:
     Hideharu Matsuura and Kazunobu Tanaka.
(2)  Int.Topical Conf.Hydrogenated Amorphous Silicon Devices and
     Techonology,
     Yorktown Heights N.Y.,November,1988;
     

     Properties of amorphous silicon/crystalline silicon heterojunctions:
     Hideharu Matsuura.
(3)  13h Int.Conf.Amorphous & Liquid Semconductors,
     Asheville N.C.,August,1989;
     Optically and thermally induced reversivle changes of midgap states
     in undoped a-Si:H:
     Hideharu Matsuura.