すいません。ただいま工事中です。

下記の論文を参照下さい。

(1)  Junction properties of amorphous semiconductors
     Hideharu Matsuura;
     in Glow-Discharge Hydrogenated Amorphous Silicon,
     Edited by K.Tanaka(KTK Scientific Publishers,Tokyo,1989),
     Chapter 10,pp.227-249.
(2)  Electrical properties of amorphous/crystalline-semiconductor hetero-
     junctions
     Hideharu Matsuura and Hidyo Okushi;
     in Amorphous and Micro-crystalline Semiconductor Devices Volume �U:
     Materials and Device Physics,
     edited by J.Kanicki(Artech House,Boston,1992),
     Chapter11,pp.517-561.

(1)  Electrical properties of n-amorphous/p-crystalline silicon hetero-
     junctions
　 　Hideharu Matsuura,Tetsuhiro Okuno,Hideyo Okushi,and Kazunobu
     Tanaka;
     J.Appl.Phys.55(1984)1012-1029.
(2)  Hydrogenated amorphous-silicon/crystalline-silicon heterjunctions:
     Properties and Applications
     Hideharu Matsuura;
     IEEEE Trans.ED-36(1989)2908-2914.

(1)  Ohmic contact properties of magnesium evaporated onto undoped and P-doped a-Si:H
     Hideharu Matsuura,tetsuhiro Okuno,Hideyo okushi,Satoshi Yamasaki,
     Akihisa Matsuda,Nobuhiro Hata,Hidetoshi Oheda,and Kazunobu
     Tanaka;
     jpn.J.Appl.Phys.22(1983)L197-L199.
(2)  Metal-semiconductor junctions and amorphous-crystalline hetero-
     junctions using B-doped hydrogenated amorphous silicon
     Hideharu Matsuura,Akihisa Matsuda,Hideyo Okushi,Tetsuhiro Okuno,
     and Kazunoby Tanaka;
     Appl.Phys Lett.34(1984)433-435.

(1)  Electrical properties of n

-p amorphous-crystalline silicon hetero-
     junctions
     Hideharu Matsuura,Tetsuhiro Okuno,Hideyo Okushi,Nobuhiro Hata,
     Satoshi Yamasaki,Hidetoshi Oheda,Akihisa Matsuda,and Kazunobu
     Tanaka;
     Ext.Abs.15th Conf.Solid State Device & Materials,tokyo,1983,
     pp.185-188.

(1)  Int.Topical Conf.Hydrogenated Amorphous Silicon Devices and
     Techonology,
     Yorktown Heights N.Y.,November,1988;
     

     Properties of amorphous silicon/crystalline silicon heterojunctions:
     Hideharu Matsuura.