下記の論文を参照下さい。
著書
(1) Electrical properties of amorphous/crystalline-semiconductor hetero-
junctions
Hideharu Matsuura and Hidyo Okushi;
in Amorphous and Micro-crystalline Semiconductor Devices Volume U:
Materials and Device Physics,
edited by J.Kanicki(Artech House,Boston,1992),
Chapter11,pp.517-561.
論文
Full papers
(1) A novel method for determining the gap-state profile and its appli-
cation to amorphous Si
1-x+2Ge
x:H films
Hideharu Matsuura;
J.Appl.Phys.64(1988)1964-1973.
(2) Hydrogenated amorphous-silicon/crystalline-silicon heterjunctions:
Properties and Applications
Hideharu Matsuura;
IEEEE Trans.ED-36(1989)2908-2914.
Letters
(1) Density-of-state distriution for undoped a-Si:H and a-Si
1-XGe
X:H determinde by transient heterojunction-monitored capacitance method
Hideharu Matsuura;
Jpn.J.Appl.Phys.27(1988)L516-L518.
(2) Thermal recovery process of the midgap-state profile of light-soaked
undoped hydrogenated amorphous silicon
Hideharu Matsuura;
Appl.Phys.Lett.54(1989)344-346.
(3) Midgap-state profiles in undoped amorphous-silicon-based alloys
H.Matsuura,Z E.Smith,A.Matsuda,S.Yokoyama,M.Tanaka,m.Ueda
and K.Tanaka;
Phil.Mag.Lett.59(1989)109-114.
Proceedings
(1) The density-of-state distribution in undoped a-Si:H and a-SiGe:H
determined by geterojunctions with c-Si
Hideharu Matsuura and Kazunobu Tanaka;
Meter.Res.Soc.Symp,Reno,1988;
Meter.Res.Soc.Symp.Proc.118(1988)647-652.
(2) Opticaly and thermally induced reversible changes of midgap states
in undoped a-Si:H
Hideharu Matsuura;
13h Int.Conf.Amorphous & Liquid Semiconductors Asheville,1989;
J.Non-Cryst.Solids 114(1989)609-611.
国際会議での発表
(1) Materials Research Society Symposium,
Reno Nev.,April,1988;
The density-of state distribution in undoped a-Si:H and a-SiGe:H
determined by heterojunctions with c-Si:
Hideharu Matsuura and Kazunobu Tanaka.
(2) Int.Topical Conf.Hydrogenated Amorphous Silicon Devices and
Techonology,
Yorktown Heights N.Y.,November,1988;
(Invited)
Properties of amorphous silicon/crystalline silicon heterojunctions:
Hideharu Matsuura.
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