すいません。ただいま工事中です。


下記の論文を参照下さい。


著書
(1)  Electrical properties of amorphous/crystalline-semiconductor hetero-
     junctions
     Hideharu Matsuura and Hidyo Okushi;
     in Amorphous and Micro-crystalline Semiconductor Devices Volume U:
     Materials and Device Physics,
     edited by J.Kanicki(Artech House,Boston,1992),
     Chapter11,pp.517-561.
論文
Full papers
(1)  A novel method for determining the gap-state profile and its appli-
   cation to amorphous Si
1-x+2
Ge
x
:H films
     Hideharu Matsuura;
     J.Appl.Phys.64(1988)1964-1973.
(2)  Hydrogenated amorphous-silicon/crystalline-silicon heterjunctions:
     Properties and Applications
     Hideharu Matsuura;
     IEEEE Trans.ED-36(1989)2908-2914.
Letters
(1)  Density-of-state distriution for undoped a-Si:H and a-Si
1-X
Ge
X
:H determinde by transient heterojunction-monitored capacitance method
     Hideharu Matsuura;
     Jpn.J.Appl.Phys.27(1988)L516-L518.
(2)  Thermal recovery process of the midgap-state profile of light-soaked
     undoped hydrogenated amorphous silicon
     Hideharu Matsuura;
     Appl.Phys.Lett.54(1989)344-346.
(3)  Midgap-state profiles in undoped amorphous-silicon-based alloys
     H.Matsuura,Z E.Smith,A.Matsuda,S.Yokoyama,M.Tanaka,m.Ueda
     and K.Tanaka;
     Phil.Mag.Lett.59(1989)109-114.
Proceedings
(1)  The density-of-state distribution in undoped a-Si:H and a-SiGe:H
     determined by geterojunctions with c-Si
     Hideharu Matsuura and Kazunobu Tanaka;
     Meter.Res.Soc.Symp,Reno,1988;
     Meter.Res.Soc.Symp.Proc.118(1988)647-652.
(2)  Opticaly and thermally induced reversible changes of midgap states
     in undoped a-Si:H
     Hideharu Matsuura;
     13h Int.Conf.Amorphous & Liquid Semiconductors Asheville,1989;
     J.Non-Cryst.Solids 114(1989)609-611.
国際会議での発表
(1)  Materials Research Society Symposium,
     Reno Nev.,April,1988;
     The density-of state distribution in undoped a-Si:H and a-SiGe:H
     determined by heterojunctions with c-Si:
     Hideharu Matsuura and Kazunobu Tanaka.
(2)  Int.Topical Conf.Hydrogenated Amorphous Silicon Devices and
     Techonology,
     Yorktown Heights N.Y.,November,1988;
     
(Invited)
     Properties of amorphous silicon/crystalline silicon heterojunctions:
     Hideharu Matsuura.

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