すいません。ただいま工事中です。

下記の論文を参照下さい。

(1)  Interface electronic properties between silicon and silicon nitride
     depositer by direct phochemical vapor deposition
     Hideharu Matsuura,Masahiro Yoshimoto and Hiroyoki Matsunami:
     Jpn.J.Appl Phys.35(1996)2614-2618.

(1)  Dishargin current transient spectroscopy for evaluationg traps in
     insulators
     Hideharu Matsuura,Masahiro Yoshimoto,and Hiroyuki Matsunami:
     Jpn.J.Appl.Phys.34(1995)L185-L187.
(2)  Increase of leakage current and trap densities caused by bias stress
     in silicon nidtride prepare by photo-chemical vapor deposition
     Hideharu Matsuura,Masahiro Yoshimoto and Hiroyuki Matsunami:
     Jpn.J.Appl.Phys.34(1995)L371-L374.