"Determination Methods of Densities and Energy Levels of Impurities and Defects Affecting Majority-Carrier Concentration in Next-Generation Semiconductors"
Hideharu Matsuura
in Advances in Condencsed Matter and Materials Research, Volume 10

　　　　　　　　　　　　　　　　　　　

Now you can download DCTS software!

Free Application Software for Researches and Studies

   1. FCCS (Free Carrier Concentration Spectroscopy)
      Determination of densities and energy levels of impurities and defects in semiconductors
      using the temperature dependence of the majority-carrier concentration
      obtained by Hall-effect measurements.
      By using curve-fitting procedure, this version can finely adjust the densities and energy levels
      determined by FCCS.

      Version 1.7.1 (FCCSWin1_7_1Auto.zip,  3.92 MB) August 23, 2017
      (Windows10 is recommended as an operating system.)
      (Winows10, Windows8, Windows7, Windows2000/XP, Windows98/98SE)

   2. DCTS (Discharge Current Transient Spectroscopy)
      Determination of densities and energy levels of traps in insulators, ferroelectrics and
      high-resistivity semiconductors using the transient discharge current.

      Version 1.0 (DCTSWin_1_0.zip, 2.69 MB) January 23, 2007

   3. Band bending in ferroelectric Schottky barrier diode (FSBD1_1.zip, 732 kB)  July 1, 2003
      Please see the following paper
      "Calculation of band bending in ferroelectric semiconductor"
      Hideharu Matsuura
      New J. Phys. 2(2000)8.1-8.11  PDF file 254 kB

Publications

1. Electrical Behabior of Mg in Mg-Implanted 4H-SiC Layer
   Hideharu Matsuura, Tatsuya Morine, and Shinji nagamachi
   Acta Physica Polonica A 125(2014)1017-1020. ( 708 KB)

2. Electrical Properties of Mg-Implanted 4H-SiC
   Hideharu Matsuura, Tatsuya Morine, and Shinji nagamachi
   Materials Science Forum 778-780(2014)685-688. ( 578 KB)

3. Simulation of Thick Gated Silicon Drift X-ray Detector Operated by a Single High-Voltage Source
    Hideharu Matsuura
    Jpn. J. Appl. Phys. 52(2013)024301 1-5. ( 1.09 MB)

4. Effects of Sacrifical Oxidatin on Characterization of Defects in Hi-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
    Seiji Nishikawa, Ryota Okada, and Hideharu Matsuura
    Materials Science Forum 717-720(2012)271-274. ( 277 KB)

5. Possibilities for Thick, Simple-Structure Silicon X-Ray Detectors Operating by Peltier Cooling
    Hideharu Matsuura, Derek Hunninger, Ryota Okada, Seigo Kitanoya, Seiji Nishikawa, and Keith Decker
    Key Engineering Materials 495(2012)294-297. ( 369 KB)

6. Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation
    Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, and Takeshi Ohshima
    Materials Science Forum 679-680(2011)181-184. ( 159 KB)

7. Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation
    Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Yoshiko Myojin, Yukei Matsuyama, Shinobu Onoda, and Takeshi Ohshima
    Open Applied Physics Journal 4(2011)37-40. ( 359 KB)

8. Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing
   Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Yoshiko Myojin, Takunori Nojiri, Yukei Matsuyama, and Takashi Ohshima
       Physica B 404(2009)4755-4757. ( 160 KB)

9. Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectrscopy
   Hideharu Matsuura, Miyuki Takahashi, Yoshitaka Kagawa, Shoichi Tano, and Takayuki Miyake
   Marerials Science Furom 615-617(2009)385-388. ( 304 KB)

10. Characteristics of Traps in Semi-Insulating 4H-SiC by Discharge Current Transinet Spectroscopy
    Miyuki Takahashi, and Hideharu Matsuura
    Marerials Science Furom 600-603(2009)393-396. ( 225 KB)

11. Effect of Itrinsic Defects in High-Purity Semi-Insulating 4H-SiC on Reverse Current-Voltage Characteristics of Schottky Barrier Diodes
    Hideharu Matsuura, Yoshitaka Kagawa Miyuki Takahashi, Shoichi Tano,and Takayuki Miyake
    Jpn. J. Appl. Phys. 48(2009)056504 1-4. ( 210 KB)

12. Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation
   Hideharu Matsuura, Nobumasa Minohara, and Takeshi Ohshima
   J. Appl. Phys. 104(2008)043702 1-6. ( 222 KB)

13. Characterization of Intrinsic Defects in High-Purity High-Resistivity p-Type 6H-SiC
   Hideharu Matsuura, Hirokazu Yanase, and Miyuki Takahashi
   Jpn. J. Appl. Phys. 47(2008)7052-7055. ( 147 KB)

14. Mechanisms of Reduction in Hole Concentration in Al-Implanted p-Type 6H-SiC by 1 MeV Electron Irradiation
     H. Matsuura, Keisuke Izawa, Nobumasa Minohara, and Takeshi Ohshima
     Jpn. J. Appl. Phys. 47(2008)5355-5357. ( 90.9 KB)

15. Characterization of deep centers in semi-insulating SiC and HgI2: application of discharge current transeint sepectroscopy
     Hideharu Matsuura, Miyuki Takahashi, Shunji Nagata, and Kazuo Taniguchi
     J. Materials Science: Materials in Electronics 19(2008)810-814. ( 218 KB)

16. A graphical peak analysis method for characterizing impurities in SiC, GaN and diamond form temperature-dependent majority-carrier concentration
     Hideharu Matsuura
     J. Materials Science: Materials in Electronics 19(2008)720-726. ( 111 KB)

17. Mechanisms of Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons
     Hideharu Matsuura, N. Minohara, Y. Inagawa, M. Takahashi, T. Ohshima and H. Itoh
     Materials Science Forum 556-557(2007)379. ( 170 KB)

18. Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors
     Hideharu Matsuura
     Physical Review B 74(2006)245216. ( 140 KB)

19. Accurate Determination of Density and Energy Level of B Acceptor in Diamond from Temperature Dependence of Hole Concentration
     Hideharu Matsuura, Tatsuya Morizono, Yuuki Inoue, Sou kagamihara, Akihiko Namba, Takahiro Imai and Toshihiko Takebe
     Jpn. J. Appl. Phys. 45(2006)6376-6378. ( 128 KB)

20. Accurate Determination of Acceptor Densities and Energy Levels in Undoped InGaSb from Temperature Dependence of Hole Concentration
     Hideharu Matsuura, Kazuhiro Nishikawa, Masaharu Segawa and Wataru Susaki
     Jpn. J. Appl. Phys. 45(2006)6373-6375. ( 156 KB)

21. Si Substrate Suitable for Radiation-Resistant Space Solar Cells
     H. Matsuura, Hirofumi Iwata, Sou kagamihara, Ryohei Ishihara, Masahiko Komeda, Hideaki Imai, Masanori Kikuta, Yuuki Inoue, Tadashi Hisamatsu, Shirou Kawakita, Takeshi Ohshima and Hisayoshi Itoh
     Jpn. J. Appl. Phys. 45(2006)2648-2655. ( 230 kB)

22. Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H-SiC
     Hideharu Matsuura, Sou kagamihara, Yuji itoh, Takeshi Ohshima and Hisayoshi Itoh
     Physica B 376-377(2006)342-345. ( 143 kB)

23. Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation
     Hideharu Matsuura, Sou kagamihara, Yuji itoh, Takeshi Ohshima and Hisayoshi Itoh
     Microelectronic Engineering 83(2006)17-19. ( 105 kB)

24. Ionization of deep Te donor in Te-doped Al0.6Ga0.4Sb epilayers
     Hideharu Matsuura and Kazuhiro Nishikawa
     J. Appl. Phys. 97(2005)093711-1. ( 125 kB)

25. Determination of densities and energy levels of donors in free-standing undoped 3C-SiC epilayers with thicknesses of 80 um
     Hideharu Matsuura, Hiroyuki Nagasawa, Kuniaki Yagi, and Takamitsu Kawahara
     J. Appl. Phys. 96(2004)7346. ( 108 kB)

26. Parameters required to simulate electric characteristics of SiC devices for n-type 4H-SiC
     Sou Kagamihara, Hideharu Matsuura, Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe, Takashi Shinohe, and Kazuo Arai
     J. Appl. Phys. 96(2004)5601. ( 102 kB)

27. Dependence of acceptor levels and hole mobility on acceptor density and temperature in Al-doped p-type 4H-SiC epilayers
     Hideharu Matsuura, Masahiko Komeda, Sou Kagamihara, Hirofumi Iwata, Ryohei Ishihara,  Tetsuo Hatakeyama, Takatoshi Watanabe, Kazutoshi Kojima, Takashi Shinohe, and Kazuo Arai
     J. Appl. Phys. 96(2004)2708. ( 151 kB)

28. Investigation of a distribution function suitable for acceptors in SiC
     Hideharu Matsuura
     J. Appl. Phys. 95(2004)4213. ( 128 kB)

Conferences

   1. Possibilities for Thick, Simple-structure X-ray Detectors Operated by Peltier Cooling and One High Voltage Bias
      Hideharu Matsuura, Derek Hunninger, Ryota Okada, and Keith Decker
       BIT's 1st Annual Conference and Expo of AnalytiX-2012
      (March 23-25, 2012) Beijin, Chaina
      (abstract 61.2 KB, power point 4.56 MB, photo5.39 MB, photoPDF 2.63 MB)

   2. Effects of Sacrifical Oxidatin on Characterization of Defects in Hi-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
        Seiji Nishikawa, Ryota Okada, and Hideharu Matsuura
       International Conference on SiC and Related Materials 2011
       (September 11-16, 2011)  Cleveland, Ohio, USA

   3. Possibilities for Thick, Simple-Structure Silicon X-Ray Detectors Operating by Peltier Cooling
       Hideharu Matsuura, Derek Hunninger, Ryota Okada, Seigo Kitanoya, Seiji Nishikawa, and Keith Decker
       International Conference on Materials and Applications for Sensers and Transducers
      (May 13-17, 2011) Kos Island, Greece
      (abstract 28.4 KB, power point 2.36 MB)

   4. Reduction in Majority-Carrier Concentration in N-Doped or Al-Doped 4H-SiC Epilayers by Electron Irradiatin
       Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Takunori Nojiri, Shinobu Onoda, Takeshi Ohshima
       Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, ,
      (Oct. 27-29, 2010) Takashaki, Japan
       (proceeding 91 kB  power point 522 kB)


   5. Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC epilayers by Electron Irradiation
      H. Matsuura, H. Yanagisawa, K. Nishino, T. Nojiri, S. Onoda, T. Ohshima
      The 8th European Conference on Silicon Carbide and Related Materials (ECSCRM8th)
      (August 29-September 2) Oslo, Norway
       (abstract 79.8 kB  postert 223 MB)

   6.  Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing
       Hideharu Matsuura, Hideki Yanagisawa, Kozo Nishino, Yoshiko Myojin, Takunori Nojiri, Yukei Matsuyama, and Takeshi Ohshima
       The 25th International Conference on Defects in Semiconductors (ICDS25)
       (July 20-24, 2009) St. Peterburg, Russia
       (abstract 66 kB  power point 1.2 MB)

   7.  Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
       Hideharu Matsuura, Miyuki Takahashi, Yoshitaka Kagawa, Shoichi Tano, and Takayuki Miyake
       7th European Conference on SiC and Related Materials 2008
       (September7-11, 2008)  Barcelona, Spain
       (abstract 302 KB  poster 108 KB)

   8.  Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
       Miyuki Takahashi, Hideharu Matsuura
       International Conference on SiC and Related Materials 2007
       (October 15-19, 2007)  Otsu, Siga, Japan
       (abstract 82 KB)

   9.  A graphical peak analysis method for characterizing impurites in diamond form temperature-dependent majority-carrier concentration
       Hideharu Matsuura, Nobumasa Minohara, T. Morizono, A. Sotodate, T. Takebe, H. Umezono, and S. Shikata
       1st International Conference on New Diamond and Nano Carbons
       (May 28-31, 2007)  Osaka, Japan
       (abstract 114 KB  poster 89.1 KB)

   10.  A graphical peak analysis method for characterizing impurites in SiC, GaN and diamond form temperature-dependent majority-carrier concentration
       Hideharu Matsuura
       14th Semiconducting and Insulating Materials Conference
       (May 15-20, 2007)  Fayetteville, Arkansas, USA
       (abstract 127 KB  poster 210 KB)

   11.  Characterization of deep centers in semi-insulating SiC and HgI2: application of discharge current transient spectroscopy
       H. Matsuura, M. Takahashi, S. Nagata, and K. Taniguchi
       14th Semiconducting and Insulating Materials Conference
       (May 15-20, 2007)  Fayetteville, Arkansas, USA

       (abstract 91.2 KB  PowerPoint 386 KB)

   12.  Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons
       Hideharu Matsuura, Nobumasa Minohara, Miyuki Takahashi, Takeshi Ohshima, and Hisayoshi Itoh
       7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
       (October 16-18, 2006)  Takasaki, Japan

       (proceeding 195 KB  poster 115 KB)

   13.  Si Substrate Suitable for Radiatin-Resistant Space Solar Cells
       Hideharu Matsuura, Shirou Kawakita, Takeshi Ohshima, and Hisayoshi Itoh
       7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application
       (October 16-18, 2006)  Takasaki, Japan
       (proceeding 198 KB  poster 75 KB)

   14.  Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons
       Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Hideharu Matsuura, Takeshi Ohshima, and Hisayoshi Itoh
       2nd International Student Conference at Ibaraki University
       (October 5-6, 2006)
       Ibaraki, Japan
       (abstract 108 KB  proceeding 238 KB)

   15.  Mechanisms of Decrease in Hole Concentration in Al-doped 4H-SiC by Irradiation of 200 keV Electrons
       Hideharu Matsuura, Nobumasa Minohara, Yusuke Inagawa, Miyuki Takahashi, Takeshi Ohshima, and Hisayoshi Itoh
       6th European Conference on Silicon Carbide and Related Materials (ECSCRM2006)
       (September 3-7, 2006)
      Newcastle upon Tyne, UK
       (abstract 53 KB  poster 113 KB)

   16.  Relationship between defects induced by irradiation ans reduction of hole concentration in Al-doped 4H-SiC
       Hideharu Matsuura, Sou Kagamihara, Yuji Itoh, Takeshi Ohshima, and Hisayoshi Itoh
       The 23rd International Conference on Defects in Semiconductors (ICDS23)
       (July 24-29, 2005) Awaji Island, Japan
       (abstract 519 kB  power point 2.1 MB)

   17.  Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation
       Hideharu Matsuura, Sou Kagamihara, Yuji Itoh, Takeshi Ohshima, and Hisayoshi Itoh
       International Conference on Materials for Advanced Technologies (ICMAT2005)
       (July 3-8, 2005) Singapore
       (abstract 452 KB  poster 120 KB)

   18.  Change of Majority-Carrier Concentration in p-Type Silicon by 10 MeV Proton Irradiation
       H. Iwata, S. Kagamihara, H. Matsuura, S. Kawakita, T. Ohshima, and T. Kamiya
       6th International WOrkshop on Radiation Effects on Semiconductor Devices for Space Application
       (October 6-8, 2004) Tsukuba, Japan
       (proceeding  125 kB)

   19.  Enhancement of Ionization Efficiency of Acceptors by Their Excited States in Heavily Doped p-Type GaN and Wide Bandgap Semiconductors
       Hideharu Matsuura
       2004 Joint International Meeting
       (October 3-8, 2004) Honolulu, USA
       (proceeding  302 kB)

   20.  Parameters required to simulate electric characteristics of SiC devices
       So Kagamihara, Masahiko Komeda, Hideharu Matsuura, Tetsuo Hatakeyama, Takatoshi Watanabe, Mitsuhiro Kushibe, T. Shinohe, and Kazuo Arai
       31st International Symposium on Compound Semiconductors (ISCS-2004)
       (September 12-16, 2004) Seoul, Korea
       (abstract 89 kB  proceeding  127 kB)

   21.  Enhancement of Ionization Efficiency of Acceptors by Their Excited States in Heavily Doped Wide Bandgap Semiconductors
       Hideharu Matsuura
       31st International Symposium on Compound Semiconductors (ISCS-2004)
       (September 12-16, 2004) Seoul, Korea
       (abstract 158 kB  proceeding  210 kB)